Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation
Identifieur interne : 000229 ( Main/Repository ); précédent : 000228; suivant : 000230Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation
Auteurs : RBID : Pascal:13-0214410Descripteurs français
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Abstract
This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br2 and H2O2 and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III-V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr-Br2:H2O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H3PO4-H2O2:H2O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction. .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation</title><author><name sortKey="Aureau, D" uniqKey="Aureau D">D. Aureau</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis</s1><s2>Versailles, 78035</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Chaghi, R" uniqKey="Chaghi R">R. Chaghi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis</s1><s2>Versailles, 78035</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Gerard, I" uniqKey="Gerard I">I. Gerard</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis</s1><s2>Versailles, 78035</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author><author><name sortKey="Sik, H" uniqKey="Sik H">H. Sik</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Sagem Defense Sécurité, 72-74, rue de la tour Billy</s1><s2>95101, Argenteuil</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Argenteuil</settlement></placeName></affiliation></author><author><name sortKey="Fleury, J" uniqKey="Fleury J">J. Fleury</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Sagem Defense Sécurité, 72-74, rue de la tour Billy</s1><s2>95101, Argenteuil</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Argenteuil</settlement></placeName></affiliation></author><author><name sortKey="Etcheberry, A" uniqKey="Etcheberry A">A. Etcheberry</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis</s1><s2>Versailles, 78035</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0214410</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0214410 INIST</idno><idno type="RBID">Pascal:13-0214410</idno><idno type="wicri:Area/Main/Corpus">000B94</idno><idno type="wicri:Area/Main/Repository">000229</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aqueous solutions</term><term>Atomic force microscopy</term><term>Energy gap</term><term>Etching</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>Inorganic compounds</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Gravure</term><term>Semiconducteur III-V</term><term>Solution aqueuse</term><term>Bande interdite</term><term>Spectre photoélectron RX</term><term>Microscopie force atomique</term><term>Antimoniure d'indium</term><term>In Sb</term><term>InSb</term><term>Composé minéral</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br<sub>2</sub> and H<sub>2</sub>O<sub>2</sub> and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III-V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr-Br<sub>2</sub>:H<sub>2</sub>O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H<sub>3</sub>PO<sub>4</sub>-H<sub>2</sub>O<sub>2</sub>:H<sub>2</sub>O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction. .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>276</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation</s1></fA08><fA11 i1="01" i2="1"><s1>AUREAU (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>CHAGHI (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>GERARD (I.)</s1></fA11><fA11 i1="04" i2="1"><s1>SIK (H.)</s1></fA11><fA11 i1="05" i2="1"><s1>FLEURY (J.)</s1></fA11><fA11 i1="06" i2="1"><s1>ETCHEBERRY (A.)</s1></fA11><fA14 i1="01"><s1>Institut Lavoisier UVSQ-CNRS UMR 8180, 45 avenue des Etats Unis</s1><s2>Versailles, 78035</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Sagem Defense Sécurité, 72-74, rue de la tour Billy</s1><s2>95101, Argenteuil</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>182-189</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000503803940250</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>38 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0214410</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>This paper investigates the wet etching of InSb surfaces by two different oxidant agents: Br<sub>2</sub> and H<sub>2</sub>O<sub>2</sub> and the consecutive oxides generation onto the surfaces. The strong dependence between the chemical composition of the etching baths and the nature of the final surface chemistry of this low band-gap III-V semiconductor will be especially highlighted. One aqueous etching solution combined hydrobromic acid and Bromine (HBr-Br<sub>2</sub>:H<sub>2</sub>O) with adjusted concentrations. The other solution combines orthophosphoric and citric acids with hydrogen peroxide (H<sub>3</sub>PO<sub>4</sub>-H<sub>2</sub>O<sub>2</sub>:H<sub>2</sub>O). Depending on its composition, each formulation gave rise to variable etching rate. The dosage of Indium traces in the etching solution by atomic absorption spectroscopy (AAS) gives the kinetic variation of the dissolution process. The variations on etching rates are associated to the properties and the nature of the formed oxides on InSb surfaces. Surface characterization is specifically performed by X-ray photoelectron spectroscopy (XPS). A clear evidence of the differences between the formed oxides is highlighted. Atomic force microscopy is used to monitor the surface morphology and pointed out that very different final morphologies can be reached. This paper presents new results on the strong variability of the InSb oxides in relation with the InSb reactivity toward environment interaction. .</s0></fC01><fC02 i1="01" i2="3"><s0>001B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70</s0></fC02><fC02 i1="03" i2="3"><s0>001B80</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Gravure</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Etching</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Solution aqueuse</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Aqueous solutions</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Bande interdite</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Energy gap</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Spectre photoélectron RX</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>X-ray photoelectron spectra</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>In Sb</s0><s4>INC</s4><s5>32</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>33</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Composé minéral</s0><s5>62</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>62</s5></fC03><fN21><s1>196</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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